low access memory

英 [ləʊ ˈækses ˈmeməri]

美 [loʊ ˈækses ˈmeməri]

【计】慢速存储器

The semiconductor industry has been hammered in past years by continued low prices for the commoditised dynamic random access memory, or DRAM, chips, which have pushed chipmakers to expand into more sophisticated products.
过去几年，由于商品化动态随机存储器（dram）芯片价格持续走低，半导体行业遭受重创，迫使芯片生产商纷纷拓展更为复杂的产品。
Some low power techniques are adapted such as split bit line technique, two stage static decoder, single ended read access memory cell, clock gating and split decoder for low power.
设计用到一些功耗的优化技术包括：位线分割技术、两级静态译码技术、单位线读存储单元、门控时钟，部分译码技术等。
Because of high speed, low power consumption, and good compatibility with traditional CMOS processes, Resistive Random Access Memory ( RRAM) is considered as one of the strongest competition of the next generation NVM.
其中，阻变存储器以其速度快、功耗低、与传统CMOS工艺相兼容等特点，被认为是下一代非挥发性存储器的有力竞争者。